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參數(shù)資料
| 型號(hào)： | 2N6344A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,600V硅雙向晶閘管) |
| 中文描述： | 600 V, 12 A, TRIAC, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2N6344A |
2N6344A, 2N6348A, 2N6349A
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted; Electricals apply in either direction)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
= 25
°
C
T
J
= 110
°
C
I
DRM
,
I
RRM
10
2.0
A
mA
ON CHARACTERISTICS
*Peak On-State Voltage
(I
TM
=
17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
2%)
V
TM
1.3
1.75
V
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 )
Quadrant I: MT2(+), G(+)
Quadrant II: MT2(+), G()
Quadrant III: MT2(), G()
Quadrant IV: MT2(), G(+)
*MT2(+), G(+); MT2(), G() T
C
= 40
°
C
*MT2(+), G(); MT2(), G(+) T
C
= 40
°
C
All
2N6348A and 2N6349A only
All
2N6348A and 2N6349A only
I
GT
6.0
6.0
10
25
50
75
50
75
100
125
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 )
Quadrant I: MT2(+), G(+)
Quadrant II: MT2(+), G()
Quadrant III: MT2(), G()
Quadrant IV: MT2(), G(+)
*MT2(+), G(+); MT2(), G() T
C
= 40
°
C
*MT2(+), G(); MT2(), G(+) T
C
= 40
°
C
All
2N6348A and 2N6349A only
All
2N6348A and 2N6349A only
V
GT
0.9
0.9
1.1
1.4
2.0
2.5
2.0
2.5
2.5
3.0
V
Gate NonTrigger Voltage (V
D
= Rated V
DRM
, R
L
= 10 k , T
J
= 110
°
C)
*MT2(+), G(+); MT2(), G(); MT2(+), G(); MT2(), G(+)
V
GD
0.2
V
Holding Current
(V
D
= 12 Vdc, Gate Open)
Initiating Current =
T
C
= 25
°
C
*T
C
= 40
°
C
200 mA
I
H
6.0
40
75
mA
*Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 17 A, I
GT
= 120 mA,
Rise Time = 0.1 s, Pulse Width = 2 s)
t
gt
1.5
2.0
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(V
D
= Rated V
DRM
, I
TM
= 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, T
C
= 80
°
C)
*Indicates JEDEC Registered Data.
dv/dt(c)
5.0
V/ s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6348A | 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,600V硅雙向晶閘管) |
| 2N6349A | 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,800V硅雙向晶閘管) |
| 2N6344G | Triacs Silicon Bidirectional Thyristors |
| 2N6344 | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,600V硅雙向晶閘管) |
| 2N6349 | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,800V硅雙向晶閘管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6344A/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs |
| 2N6344A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
| 2N6344AG | 功能描述:雙向可控硅 THY 12A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6344G | 功能描述:雙向可控硅 THY 8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6345 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:TO-220AB |
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