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參數(shù)資料
| 型號： | 2N6344 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,600V硅雙向晶閘管) |
| 中文描述： | 600 V, 8 A, TRIAC, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2N6344 |
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 4
1
Publication Order Number:
2N6344/D
2N6344
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever fullwave silicon gate controlled solidstate devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
Features
Blocking Voltage to 800 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in all Four Quadrants
For 400 Hz Operation, Consult Factory
PbFree Package is Available*
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(T
J
= 40 to +110
°
C, Sine Wave
50 to 60 Hz, Gate Open)
2N6344
2N6349
V
DRM,
V
RRM
600
800
V
OnState RMS Current (T
= +80
°
C) Full
Cycle Sine Wave 50 to 60 Hz (T
C
= +90
°
C)
I
T(RMS)
8.0
4.0
A
Peak NonRepetitive Surge Current (One
Full Cycle, Sine Wave 60 Hz, T
C
= +25
°
C)
Preceded and followed by rated current
I
TSM
100
A
Circuit Fusing Consideration (t = 8.3 ms)
I
2
t
40
A
2
s
Peak Gate Power
(T
C
= +80
°
C, Pulse Width = 2 s)
P
GM
20
W
Average Gate Power
(T
C
= +80
°
C, t = 8.3 ms)
P
G(AV)
0.5
W
Peak Gate Current
(T
C
= +80
°
C, Pulse Width = 2.0 s)
I
GM
2.0
A
Peak Gate Voltage
(T
C
= +80
°
C, Pulse Width = 2.0 s)
V
GM
10
V
Operating Junction Temperature Range
T
J
T
stg
40 to +125
°
C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Indicates JEDEC Registered Data.
1. V
and V
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
40 to +150
°
C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
TO220AB
CASE 221A
STYLE 4
123
4
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
MT1
G
MT2
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
2N6344G
AYWW
A
Y
WW = Work Week
G
= PbFree Package
= Assembly Location
= Year
MARKING
DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
2N6344
TO220AB
500 Units / Box
2N6344G
TO220AB
(PbFree)
500 Units / Box
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6349 | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,800V硅雙向晶閘管) |
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| 2N6351 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6352 | NPN DARLINGTON POWER SILICON TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6344/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs |
| 2N6344_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
| 2N6344A | 功能描述:雙向可控硅 THY 12A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6344A/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs |
| 2N6344A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
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