- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371468 > 2N6344A (ON SEMICONDUCTOR) 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,600V硅雙向晶閘管) PDF資料下載
參數(shù)資料
| 型號： | 2N6344A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,600V硅雙向晶閘管) |
| 中文描述： | 600 V, 12 A, TRIAC, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2N6344A |
2N6344A, 2N6348A, 2N6349A
http://onsemi.com
2
MAXIMUM RATINGS
Characteristics
Symbol
Value
Unit
*Peak Repetitive OffState Voltage (Note 1)
(Gate Open, T
J
= 40 to +110
°
C, Sine Wave 50 to 60 Hz, Gate Open)
2N6344A, 2N6348A
2N6349A
V
DRM,
V
RRM
600
800
V
*OnState RMS Current (Full Cycle Sine Wave 50 to 60 Hz)
(T
C
= +80
°
C)
(T
C
= +95
°
C)
I
T(RMS)
12
6.0
A
*Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T
C
= +80
°
C)
Preceded and followed by rated current
I
TSM
100
A
Circuit Fusing Consideration (t = 8.3 ms)
I
2
t
59
A
2
s
*Peak Gate Power (T
C
= +80
°
C, Pulse Width = 2.0 s)
*Average Gate Power (T
C
= +80
°
C, t = 8.3 ms)
P
GM
20
W
P
G(AV)
0.5
W
*Peak Gate Current (Pulse Width = 2.0 s; T
C
= +80
°
C)
*Peak Gate Voltage (Pulse Width = 2.0 s; T
C
= +80
°
C)
I
GM
2.0
A
V
GM
10
V
*Operating Junction Temperature Range
T
J
40 to +125
°
C
*Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*Indicates JEDEC Registered Data.
1. V
and V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
T
stg
40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, JunctiontoCase
R
JC
T
L
2.0
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ORDERING INFORMATION
Device
Package
Shipping
2N6344A
TO220AB
500 Units / Box
2N6344AG
TO220AB
(PbFree)
2N6348A
TO220AB
2N6348AG
TO220AB
(PbFree)
2N6349A
TO220AB
2N6349AG
TO220AB
(PbFree)
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6348A | 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,600V硅雙向晶閘管) |
| 2N6349A | 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,800V硅雙向晶閘管) |
| 2N6344G | Triacs Silicon Bidirectional Thyristors |
| 2N6344 | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,600V硅雙向晶閘管) |
| 2N6349 | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,800V硅雙向晶閘管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6344A/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs |
| 2N6344A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
| 2N6344AG | 功能描述:雙向可控硅 THY 12A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6344G | 功能描述:雙向可控硅 THY 8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6345 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:TO-220AB |
發(fā)布緊急采購，3分鐘左右您將得到回復。