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參數(shù)資料
| 型號： | 2N6348A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,600V硅雙向晶閘管) |
| 中文描述： | 600 V, 12 A, TRIAC, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2N6348A |
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 4
1
Publication Order Number:
2N6344A/D
2N6344A, 2N6348A,
2N6349A
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
Blocking Voltage to 800 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in all Four Quadrants
For 400 Hz Operation, Consult Factory
8.0 A Devices Available as 2N6344 thru 2N6349
PbFree Packages are Available*
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
TO220AB
CASE 221A
STYLE 4
123
4
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
MT1
G
MT2
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
2N634xAG
AYWW
2N634xA = Device Code
x = 4, 8, or 9
= Assembly Location
= Year
= Work Week
= PbFree Package
A
Y
WW
G
MARKING
DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6349A | 12 Ampere RMS Silicon Bidirectional Thyristor(12A（均方根值）,800V硅雙向晶閘管) |
| 2N6344G | Triacs Silicon Bidirectional Thyristors |
| 2N6344 | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,600V硅雙向晶閘管) |
| 2N6349 | 8 Ampere RMS Silicon Bidirectional Thyristor(8A（均方根值）,800V硅雙向晶閘管) |
| 2N6350 | NPN DARLINGTON POWER SILICON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6348AG | 功能描述:雙向可控硅 雙向可控硅 RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6349 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:TO-220AB |
| 2N6349A | 功能描述:雙向可控硅 THY 12A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6349AG | 功能描述:雙向可控硅 雙向可控硅 RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N634A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-9 |
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