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參數(shù)資料
| 型號(hào)： | 2N5087 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP Silicon Amplifier Transistor(硅PNP放大器晶體管) |
| 中文描述： | 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 151K |
| 代理商： | 2N5087 |
2N5087
http://onsemi.com
6
Figure 17. Thermal Response
t, TIME (ms)
1.0
0.7
0.01
r
(
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k 2.0k
5.0k 10k
20k
50k
100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t
/t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN569)
Z
JA(t)
= r(t) w R
JA
T
J(pk)
T
A
= P
(pk)
Z
JA(t)
t
1
t
2
P
(pk)
FIGURE 19
Figure 18. ActiveRegion Safe Operating Area
T
J
, JUNCTION TEMPERATURE (
°
C)
10
4
40
I
Figure 19. Typical Collector Leakage Current
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
400
2.0
I
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 19. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 17 was calculated for various
duty cycles.
To find Z
JA(t)
, multiply the value obtained from Figure
17 by the steady state value R
JA
.
Example:
The 2N5087 is dissipating 2.0 watts peak under the follow-
ing conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P
(pk)
x R
JA
= 0.22 x 2.0 x 200 = 88
°
C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at
www.onsemi.com
.
The safe operating area curves indicate I
C
V
CE
limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 18 is based upon T
J(pk)
= 150
°
C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
≤
150
°
C. T
J(pk)
may be calculated from the data in Figure 17. At high case
or ambient temperatures, thermal limitations will reduce the
power than can be handled to values less than the limitations
imposed by second breakdown.
10
2
10
1
10
0
10
1
10
2
10
3
20
0
+20
+40
+60
+80
+100 +120 +140 +160
V
CC
= 30 V
I
CEO
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 V
T
A
= 25
°
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 s
T
C
= 25
°
C
1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0
8.0
10
20
40
T
J
= 150
°
C
100 s
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|---|---|
| 2N5087/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Amplifier Transistor PNP |
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| 2N5087_D26Z | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5087_D75Z | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5087_J18Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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