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參數(shù)資料
| 型號： | 2N5087 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Silicon Amplifier Transistor(硅PNP放大器晶體管) |
| 中文描述： | 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 151K |
| 代理商： | 2N5087 |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 3
1
Publication Order Number:
2N5087/D
2N5087
Preferred Device
Amplifier Transistor
PNP Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
50
Vdc
CollectorBase Voltage
V
CBO
50
Vdc
EmitterBase Voltage
V
EBO
3.0
Vdc
Collector Current Continuous
I
C
50
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
200
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
83.3
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
2N5087
TO92
5000 Units/Box
2N5087G
TO92
(PbFree)
TO92
5000 Units/Box
3 COLLECTOR
2
BASE
1 EMITTER
2N5087RLRA
2000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2N5087RLRAG
TO92
(PbFree)
2000/Tape & Reel
3
2
1
TO92 (TO226)
CASE 29
STYLE 1
A
Y
WW
= Assembly Location
= Year
= Work Week
= PbFree Package
MARKING DIAGRAM
2N
5087
AYWW
(Note: Microdot may be in either location)
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| 2N5160 | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 400MA I(C) | TO-39 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5087/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Amplifier Transistor PNP |
| 2N5087_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistor PNP Silicon |
| 2N5087_D26Z | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5087_D75Z | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5087_J18Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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