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參數(shù)資料
| 型號(hào)： | 2N4918 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 254K |
| 代理商： | 2N4918 |
2N4918 thru 2N4920
4
Motorola Bipolar Power Transistor Device Data
TYPICAL DC CHARACTERISTICS
R
BE
,EXTERNAL
BASE–EMITTER
RESIST
ANCE
(OHMS)
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
– 0.2
1000
2.0
Figure 8. Current Gain
IC, COLLECTOR CURRENT (mA)
10
3.0 5.0
10
20 30
200 300 500
2000
500
200
100
70
Figure 9. Collector Saturation Region
1.0
0.2
IB, BASE CURRENT (mA)
0
0.3 0.5
1.0
2.0
5.0
10
20
50
200
0.8
0.6
0.4
0.2
IC = 0.1 A
TJ = 25°C
0.25 A
0.5 A
1.0 A
700
300
h
FE
,DC
CURRENT
GAIN
TJ = 150°C
25
°C
– 55
°C
VCE = 1.0 V
50
30
20
50
100
1000
3.0
30
100
108
0
Figure 10. Effects of Base–Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
30
60
90
120
150
107
105
104
103
VCE = 30 V
IC = 10 ICES
IC = 2x ICES
IC ≈ ICES
ICES VALUES
OBTAINED FROM
FIGURE 13
106
1.5
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
20 30
50
100
200 300
2000
1.2
0.9
0.6
0.3
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOL
TAGE
(VOL
TS)
Figure 11. “On” Voltage
3.0
500
1000
VBE @ VCE = 2.0 V
102
Figure 12. Collector Cut–Off Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
101
100
10–1
,COLLECT
OR
CURRENT
(
A)
I C
10– 2
103
– 0.1
0
+ 0.1
+ 0.2
+ 0.3
+ 0.4
+ 0.5
VCE = 30 V
TJ = 150°C
100
°C
25
°C
FORWARD
IC = ICES
104
+ 2.5
2.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
3.0 5.0
10
20 30
50
100 200
2000
TJ = – 55°C to +100°C
TEMPERA
TURE
COEFFICIENTS
(mV/
C)° +2.0
+ 1.5
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
θVB FOR VBE
*
θVC FOR VCE(sat)
TJ = 100°C to 150°C
*APPLIES FOR IC/IB <
hFE @ VCE + 1.0 V
2
+ 1.0
300 500
1000
REVERSE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4918 LEDFREE | 功能描述:兩極晶體管 - BJT PNP Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4918/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Medium-Power Plastic PNP Silicon Transistors |
| 2N4918_04 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Medium-Power Plastic PNP Silicon Transistors |
| 2N49186 | 制造商:ON Semiconductor 功能描述: |
| 2N4918G | 功能描述:兩極晶體管 - BJT 3A 40V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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