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參數(shù)資料
| 型號(hào)： | 2N4918 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 254K |
| 代理商： | 2N4918 |
2N4918 thru 2N4920
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
1000
500
θJC(t) = r(t) θJC
θJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
10
1.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1
2.0
3.0
5.0
10
20
30
50
100
70
0.2
I C
,COLLECT
OR
CURRENT
(AMP)
TJ = 150°C
dc
5.0 ms
100
s
7.0
PULSE CURVES APPLY BELOW
RATED VCEO
1.0 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMIT @ TC = 25°C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE opera-
tion i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
t
s
,ST
ORAGE
TIME
(
s)
′
t
f,
F
ALL
TIME
(
s)
5.0
10
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05
20
30
50
70
500 700 1000
ts′ = ts – 1/8 tf
0.07
100
3.0
0.7
200 300
TJ = 25°C
TJ = 150°C
IC/IB = 20
5.0
10
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05
20
30
50
70
500 700 1000
0.07
100
3.0
0.7
200 300
TJ = 25°C
TJ = 150°C
IC/IB = 10
IC/IB = 20
IC/IB = 10
IB1 = IB2
VCC = 30 V
IB1 = IB2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4918 LEDFREE | 功能描述:兩極晶體管 - BJT PNP Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4918/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Medium-Power Plastic PNP Silicon Transistors |
| 2N4918_04 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Medium-Power Plastic PNP Silicon Transistors |
| 2N49186 | 制造商:ON Semiconductor 功能描述: |
| 2N4918G | 功能描述:兩極晶體管 - BJT 3A 40V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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