- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33256 > 2N4918 (MOTOROLA INC) 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA PDF資料下載
參數(shù)資料
| 型號： | 2N4918 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 254K |
| 代理商： | 2N4918 |
1
Motorola Bipolar Power Transistor Device Data
Medium-Power Plastic PNP
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier applications. These
high–performance plastic devices feature:
Low Saturation Voltage — VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to NPN 2N4921, 2N4922, 2N4923
*MAXIMUM RATINGS
Ratings
Symbol
2N4918
2N4919
2N4920
Unit
Collector–Emitter Voltage
VCEO
40
60
80
Vdc
Collector–Base Voltage
VCB
40
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous (1)
IC*
1.0
3.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25
_C
PD
30
0.24
Watts
W/
_C
Operating & Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
4.16
_C/W
* Indicates JEDEC Registered Data for 2N4918 Series.
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current–handling capability of the
device (See Figure 5).
(2) Recommend use of thermal compound for lowest thermal resistance.
40
30
20
10
0
25
50
75
100
125
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4918/D
Motorola, Inc. 1995
2N4918
thru
2N4920
*Motorola Preferred Device
3 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40 – 80 VOLTS
30 WATTS
*
CASE 77–08
TO–225AA TYPE
REV 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4918 | PNP, Si, POWER TRANSISTOR, TO-126 |
| 2N5195 | 80 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2N6489 | 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N4919 | 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2N491B | UJT, TO-5 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4918 LEDFREE | 功能描述:兩極晶體管 - BJT PNP Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4918/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Medium-Power Plastic PNP Silicon Transistors |
| 2N4918_04 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Medium-Power Plastic PNP Silicon Transistors |
| 2N49186 | 制造商:ON Semiconductor 功能描述: |
| 2N4918G | 功能描述:兩極晶體管 - BJT 3A 40V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。