參數(shù)資料
型號(hào)： 2N4918
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA
文件頁數(shù)： 2/6頁
文件大?。?/td> 254K
代理商： 2N4918
2N4918 thru 2N4920
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 0.1 Adc, IB = 0)
2N4918
2N4919
2N4920
VCEO(sus)
40
60
80
—
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N4918
(VCE = 30 Vdc, IB = 0)
2N4919
(VCE = 40 Vdc, IB = 0)
2N4920
ICEO
—
0.5
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C)
ICEX
—
0.1
0.5
mAdc
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
—
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
40
30
10
—
150
—
—
Collector–Emitter Saturation Voltage (1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
—
0.6
Vdc
Base–Emitter Saturation Voltage (1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
—
1.3
Vdc
Base–Emitter On Voltage (1)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
—
1.3
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
3.0
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
—
100
pF
Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
—
—
* Indicates JEDEC Registered Data.
(1) Pulse Test: PW
[ 300 s, Duty Cycle [ 2.0%
Figure 2. Switching Time Equivalent Test Circuit
5.0
10
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (mA)
VCC = 30 V
IC/IB = 20
t,
TIME
(
s)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.05
20
30
50
70 100
200
700 1000
Vin
t1
VBE(off)
APPROX 9.0 V
TURN–OFF PULSE
t3
t2
APPROX
–11 V
VCC
SCOPE
RB
Cjd << Ceb
+ 4.0 V
t1 < 15 ns
100 < t2 < 500 s
t3 < 15 ns
DUTY CYCLE
≈ 2.0%
Vin
RC
0.07
3.0
TJ = 25°C
TJ = 150°C
IC/IB = 10, UNLESS NOTED
VCC = 60 V
VCC = 30 V
VBE(off) = 0
300
500
0
Vin
APPROX
–11 V
RB and RC
varied to
obtain desired
current levels
tr
VBE(off) = 2.0 V
VCC = 60 V
td
相關(guān)PDF資料
PDF描述
2N4918 PNP, Si, POWER TRANSISTOR, TO-126
2N5195 80 V, PNP, Si, POWER TRANSISTOR, TO-126
2N6489 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2N4919 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
2N491B UJT, TO-5
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4918 LEDFREE 功能描述:兩極晶體管 - BJT PNP Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4918/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Medium-Power Plastic PNP Silicon Transistors
2N4918_04 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Medium-Power Plastic PNP Silicon Transistors
2N49186 制造商:ON Semiconductor 功能描述:
2N4918G 功能描述:兩極晶體管 - BJT 3A 40V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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