參數資料
型號： 2MBI800UG-170
廠商： FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述： IGBT MODULE
中文描述： IGBT模塊
文件頁數： 4/13頁
文件大?。?/td> 477K
代理商： 2MBI800UG-170
H04-004-03a
MS5F5924
13
4
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified )
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6)
Main Terminals 8~10 Nm (M8)
Sense Terminals 1.8~2.1 Nm (M4)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
(*)
Biggest internal terminal resistance among arm.
tr
-
0.75
-
-
-
-
-
VCE(sat)
(sense terminal)
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
VGE(th)
VGE=15V
Ic = 800A
80
1.30
-
-
nF
2.35
-
2.15
V
2.00
0.45
0.25
μs
m
IF = 800A
-
-
2.60
2.05
2.40
-
-
-
-
1.50
0.40
2.00
2.20
1.80
6.5
Units
-
2.35
Maximum
Ratings
1700
-
-
2.25
2.55
-
1.0
mA
V
7.5
V
-40 ~ +125
Ic = 800mA
1600
VCE = 20V
VGE=±20V
VCE = 0V
-
-
-
5.5
Tstg
Conditions
Storage temperature
Isolation
voltage
Viso
Items
Symbols
between terminal and copper base *1
1600
3900
150
1ms
Units
max.
typ.
min.
Characteristics
5.75
10
2.1
Gate-Emitter voltage
Collector current
Junction temperature
Collector Power Dissipation
-Ic pulse
Pc
Tj
A
°C
W
1 device
-Ic
800
3400
VAC
N m
AC : 1min.
1ms
V
V
±20
1130
800
2260
1600
Items
Symbols
Conditions
VCES
VGES
Collector-Emitter voltage
Ic
Icp
Continuous
trr
-
-
VF
(sense terminal)
Tj= 25°C
Tj=125°C
-
-
IF = 800A
-
-
tf
VCE(sat)
(main terminal)
-
Vcc = 900V
Ic = 800A
VGE=±15V,Tj=125
℃
Rgon = 1.0
Rgoff = 1.8
Cies
ton
Tj=125°C
VF
(main terminal)
Turn-off
-
VGE=0V
Tj= 25°C
toff
Collector-Emitter
saturation voltage
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Reverse recovery
Lead resistance, terminal-chip *
Turn-on
R lead
Mounting
Main Terminals
Sense Terminals
Gate-Emitter
threshold voltage
VGE = 0V
VCE = 1700V
IGES
ICES
Input capacitance
Forward on voltage
μs
VCE=10V,VGE=0V,f=1MHz
n
A
Screw Torque *2
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