參數(shù)資料
型號： 2MBI1200U4G-120
廠商： FUJI ELECTRIC CO LTD
元件分類： IGBT 晶體管
英文描述： IGBT-Module
中文描述： 1200 A, 1200 V, N-CHANNEL IGBT
封裝： M248, 10 PIN
文件頁數(shù)： 7/14頁
文件大小： 595K
代理商： 2MBI1200U4G-120
Tentative
(Under developmemt)
H04-004-003
D
14
7
MT5F16507
t
T
F
l
t
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of sample
Accept-
ance
number
1 High temperature
Reverse Bias
Test Method 101
5
( 0 : 1 )
Test temp.
: Ta = 125
±
5
℃
(Tj
≦
150
℃
)
:
VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
Bias Voltage
Bias Method
Test duration
2 High temperature
Bias (for gate)
Test Method 101
5
( 0 : 1 )
Test temp.
: Ta = 125
±
5
℃
(Tj
≦
150
℃
)
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
: 1000hr.
Bias Voltage
Bias Method
Test duration
3 Temperature
Humidity Bias
Test Method 102
Condition code C
5
( 0 : 1 )
Test temp.
Relative humidity
Bias Voltage
Bias Method
: 85
±
2
o
C
: 85
±
5%
:
VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
: 2 sec.
: 18 sec.
:
'
Tj=100±5 deg
Tj
≦
150
℃
, Ta=25±5
℃
: 15000 cycles
Test duration
ON time
OFF time
Test temp.
4 Intermitted
Operating Life
(Power cycle)
( for IGBT )
Test Method 106
5
( 0 : 1 )
Number of cycles
E
E
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Lower limit
-
-
LSL×0.8
-
-
-
Unit
Note
Upper limit
USL×2
USL×2
USL×1.2
USL×1.2
USL×1.2
USL×1.2
Electrical
characteristic
Leakage current
ICES
±IGES
VGE(th)
VCE(sat)
VF
'
VGE
or
'
VCE
'
VF
Viso
mA
P
A
mA
V
V
mV
Gate threshold voltage
Saturation voltage
Forward voltage
Thermal
resistance
IGBT
FWD
-
USL×1.2
mV
-
Isolation voltage
Visual inspection
Peeling
Plating
and the others
Broken insulation
Visual
inspection
-
The visual sample
-
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components at room
completely before the measurement.
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the
wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry
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2MBI1200U4G-170 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 1200A/1700V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 1200A/1700V; Transistor Polarity:Dual N Channel; DC Collector Current:1.6kA; Collector Emitter Voltage Vces:2.57V; Power Dissipation Pd:6.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case ;RoHS Compliant: No
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2MBI1400VXB-120P-50 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL,1400A/1200V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL,1400A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:1.8kA; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:7.65kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case ;RoHS Compliant: Yes
2MBI150-060 制造商:Fuji Electric 功能描述:
2MBI150-120 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 150A I(C)
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