參數(shù)資料
型號(hào): 28F800C2
廠商: Intel Corp.
英文描述: 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 2.4V的高級(jí)啟動(dòng)塊閃存(2.4V的高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
文件頁數(shù): 25/56頁
文件大?。?/td> 283K
代理商: 28F800C2
E
4.3
T
A =
25 °C, f
=
1 MHz
28F800C2, 28F160C2
25
PRELIMINARY
Capacitance
Sym
Parameter
Notes
Typ
Max
Units
Conditions
C
IN
Input Capacitance
1
6
8
pF
V
IN
=
0 V
C
OUT
Output Capacitance
1
10
12
pF
V
OUT
=
0 V
NOTE:
1.
Sampled, not 100% tested.
4.4
DC Characteristics
V
CC
2.4 V
–3.0 V
V
CCQ
2.4 V–3.0 V
Sym
Parameter
Note
Typ
Max
Unit
Test Conditions
I
LI
Input Load Current
1,7
±
1
μA
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=
V
CCQ
or GND
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=
V
CCQ
or GND
I
LO
Output Leakage Current
1,7
0.2
±
10
μA
I
CCS
V
CC
Standby Current
1
10
25
μA
V
CC
=
V
CC
Max
CE#
=
RP#
=
V
CCQ
WP#
=
V
CCQ
or GND
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=
V
CCQ
RP#
=
GND ± 0.2 V
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
OE# = V
IH
IL
f = 5 MHz, I
OUT
= 0 mA
Inputs = V
IL
or V
IH
V
PP
= V
PP1
Program in Progress
V
PP
=
V
PP2
(12 V)
Program in Progress
V
PP
=
V
PP1
Erase in Progress
V
PP
=
V
PP2
(12 V)
Erase in Progress
I
CCD
V
CC
Deep Power-Down
Current
1,7
7
20
μA
I
CCR
V
CC
Read Current
1,5,7
8
12
mA
I
CCW
V
CC
Program Current
1,4
18
55
mA
8
15
mA
I
CCE
V
CC
Erase Current
1,4
16
45
mA
8
15
mA
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