參數(shù)資料
型號: 28F320J5
廠商: Intel Corp.
英文描述: 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲器)
中文描述: 5伏英特爾StrataFlash存儲器(5伏32兆位英特爾的StrataFlash存儲器)
文件頁數(shù): 51/53頁
文件大?。?/td> 272K
代理商: 28F320J5
E
6.7
28F320J5/28F640J5
51
PRELIMINARY
Block Erase, Program, and Lock-Bit Configuration Performance
(3,4)
#
Sym
Parameter
Notes
2,5,6,7
2
Typ
(1)
202
180
Max
480
TBD
Unit
μs
μs
W16
W16 t
WHQV3
t
EHQV3
Write Buffer Byte Program Time
Byte Program Time (Using Word/Byte
Program Command)
Block Program Time (Using Write to Buffer
Command)
Block Erase Time
2
0.8
TBD
sec
W16 t
WHQV4
t
EHQV4
W16 t
WHQV5
t
EHQV5
W16 t
WHQV6
t
EHQV6
W16 t
WHRH
t
EHRH
NOTES:
1.
Typical values measured at T
= +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2.
Excludes system-level overhead.
3.
These performance numbers are valid for all speed versions.
4.
Sampled but not 100% tested.
5.
These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6.
Effective per-byte program time (t
WHQV1
, t
EHQV1
) is 6.3 μs/byte (typical).
7.
Effective per-word program time (t
WHQV2
, t
EHQV2
) is 12.6 μs/byte (typical).
2
0.7
TBD
sec
Set Lock-Bit Time
2
32
TBD
μs
Clear Block Lock-Bits Time
2
0.3
TBD
sec
Erase Suspend Latency Time to Read
26
35
μs
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