參數(shù)資料
型號(hào): 28F200BX-T
廠商: Intel Corp.
英文描述: Evaluation Kit for the MAX608
中文描述: 28F200BX -筆- 2兆位(128K的× 16。256K × 8)啟動(dòng)塊閃存系列
文件頁數(shù): 42/55頁
文件大?。?/td> 636K
代理商: 28F200BX-T
2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
42
SEE NEW DESIGN RECOMMENDATIONS
NOTES:
See AC Characteristics
—WE#-Controlled Write Operations
for notes 1 through 11.
12. Chip-Enable controlled writes: write operations are driven by the valid combination of CE# and WE# in systems where
CE# defines the write pulse-width (within a longer WE# timing waveform), all set-up, hold and inactive WE# times should
be measured relative to the CE# waveform.
ADDRESSES (A)
WE# (W)
OE# (G)
CE# (E)
DATA (D/Q)
RP# (P)
IH
V
IL
V
V
IH
IL
V
V
IH
IL
V
IH
V
IL
V
HH
V
V
6.5V
IL
V
IN
D
IN
A
IN
A
AVAV
t
Valid
SRD
IN
D
QVPH
t
PHHEH
t
High Z
EHDX
t
IH
V
IL
V
V (V)
1
2
3
4
6
5
EHAX
t
EHQV1,2,3,4
t
EHEL
t
EHWH
t
ELEH
t
t
DVEH
VPEH
t
QVVL
t
PHEL
t
WLEL
t
AVEH
t
PPLK
V
PPH
V
1
2
PPH
V
IL
V
IH
V
IL
V
IH
WP#
IN
D
NOTES:
1. V
CC
Power-Up and Standby.
2. Write program or Erase Set-Up Command.
3. Write Valid Address and Data (Program) or Erase Confirm Command.
4. Automated Program or Erase Delay.
5. Read Status Register Data.
6. Write Read Array Command.
0530_18
Figure 18. Alternate AC Waveforms for Write Operations (CE#
–Controlled Writes)
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