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參數(shù)資料
| 型號： | ZXMN10A11G |
| 廠商： | Zetex Semiconductor |
| 英文描述： | Connectors, Accessories; For Use With:Mini-Con-X Connectors; Accessory Type:Dust Cap RoHS Compliant: Yes |
| 中文描述： | 100V的N溝道增強型MOS管 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 1173K |
| 代理商： | ZXMN10A11G |
ZXMN10A11G
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
100
V
ID=250 A, VGS=0V
VDS=100V, VGS=0V
VGS=
±
20V, VDS=0V
ID=250 A, VDS= VGS
VGS=10V, ID=2.6A
VGS=6V, ID=1.3A
VDS=15V,ID=2.6A
Zero Gate Voltage Drain Current
1
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
2.0
4.0
V
Static Drain-Source On-State
Resistance (1)
0.60
0.70
Forward Transconductance (3)
gfs
3.95
S
DYNAMIC
(3)
Input Capacitance
Ciss
Coss
Crss
274
pF
VDS=50 V, VGS=0V,
f=1MHz
Output Capacitance
21
pF
Reverse Transfer Capacitance
11
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
tr
td(off)
tf
Qg
2.7
ns
VDD=50V, ID=1A
RG=6.0 , VGS=10V
Rise Time
1.7
ns
Turn-Off Delay Time
7.4
ns
Fall Time
3.5
ns
Gate Charge
3
nC
VDS=50V, VGS=5V,
ID=2.5A
Total Gate Charge
Qg
Qgs
Qgd
5.4
nC
VDS=50V,VGS=10V,
I
D
=2.5A
Gate-Source Charge
1.4
nC
Gate-Drain Charge
1.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.85
0.95
V
TJ=25°C, IS=1.85A,
VGS=0V
TJ=25°C, IF=1.0A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
trr
Qrr
26
ns
Reverse Recovery Charge (3)
30
nC
ELECTRICAL CHARACTERISTICS
(at TA = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMN10A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 |
| ZXMN10A11G_04 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTA | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GTA | 功能描述:MOSFET 100V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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