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參數(shù)資料
| 型號(hào)： | ZXMN10A11G |
| 廠商： | Zetex Semiconductor |
| 英文描述： | Connectors, Accessories; For Use With:Mini-Con-X Connectors; Accessory Type:Dust Cap RoHS Compliant: Yes |
| 中文描述： | 100V的N溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 1173K |
| 代理商： | ZXMN10A11G |
ZXMN10A11G
ISSUE 1 - MARCH 2002
2
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
VGS
ID
100
V
Gate-Source Voltage
20
V
Continuous Drain Current VGS=10V; TA=25°C(b)
VGS=10V; TA=70°C(b)
VGS=10V; TA=25°C(a)
1.8
1.4
1.3
A
Pulsed Drain Current (c)
IDM
IS
ISM
PD
5.8
A
Continuous Source Current (Body Diode) (b)
4.6
A
Pulsed Source Current (Body Diode)(c)
5.8
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
2
16
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
3.9
31
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θ
JA
62.5
°C/W
Junction to Ambient (b)
R
θ
JA
32
°C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10 s - pulse width limited by maximum junction temperature. Refer to
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMN10A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 |
| ZXMN10A11G_04 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTA | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GTA | 功能描述:MOSFET 100V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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