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參數(shù)資料
| 型號： | ZXMN10A09KTC |
| 廠商： | ZETEX PLC |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; Gender:Female; No. of Contacts:6; Series:Mini-Con-X; Body Material:Nylon; Connecting Termination:Solder Cup; Connector Shell Size:20; Leaded Process Compatible:Yes; Operating Voltage:600V RoHS Compliant: Yes |
| 中文描述： | 5 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252, DPAK-3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 197K |
| 代理商： | ZXMN10A09KTC |
ZXMN10A09K
S E M IC O N D U C T O R S
ISSUE 6 - J ANUARY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
(BR)DS S
100
V
I
D
= 250 A, V
GS
=0V
Zero gate voltage drain current
I
DS S
1
A
V
DS
= 100V, V
GS
=0V
Gate-body leakage
I
GS S
100
nA
V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage
V
GS (th)
2.0
4.0
V
I
D
=250 A, V
DS
=V
GS
Static drain-source on-state resistance
(1)
R
DS (on)
0.085
V
GS
= 10V, I
D
= 4.6A
0.100
V
GS
= 6V, I
D
= 4.2A
Forward transconductance
(1) (3)
g
fs
10.7
S
V
DS
= 15V, I
D
= 4.6A
DYNAMIC
(3)
Input capacitance
C
iss
1313
pF
V
DS
= 50V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
83
pF
Reverse transfer capacitance
C
rss
56
pF
SWITCHING
(2) (3)
Turn-on-delay time
t
d(on)
6.8
ns
V
DD
= 50V, I
D
= 1A
R
G
6.0 , V
GS
= 10V
Rise time
t
r
5.3
ns
Turn-off delay time
t
d(off)
27.5
ns
Fall time
t
f
12.3
ns
Total gate charge
Q
g
17.2
nC
V
DS
= 50V, V
GS
= 6V
I
D
= 4.6A
Total gate charge
Q
g
26
nC
V
DS
= 50V, V
GS
= 10V
I
D
= 4.6A
Gate-source charge
Q
gs
5.6
nC
Gate drain charge
Q
gd
7.6
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
S D
0.85
0.95
V
T
j
=25°C, I
F
= 4.7A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
40
ns
T
j
=25°C, I
S
= 3A,
di/dt=100A/ s
Reverse recovery charge
(3)
Q
rr
62
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300 s; duty cycle
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZXMN10A11G | Connectors, Accessories; For Use With:Mini-Con-X Connectors; Accessory Type:Dust Cap RoHS Compliant: Yes |
| ZXMN10A11GFTA | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTC | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10B08E6 | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMN10A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 100V, 2.4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes |
| ZXMN10A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 |
| ZXMN10A11G_04 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTA | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
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