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參數(shù)資料
| 型號： | ZXMN10A09KTC |
| 廠商： | ZETEX PLC |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; Gender:Female; No. of Contacts:6; Series:Mini-Con-X; Body Material:Nylon; Connecting Termination:Solder Cup; Connector Shell Size:20; Leaded Process Compatible:Yes; Operating Voltage:600V RoHS Compliant: Yes |
| 中文描述： | 5 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252, DPAK-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 197K |
| 代理商： | ZXMN10A09KTC |
ZXMN10A09K
S E M IC O N D U C T O R S
ISSUE 6 - J ANUARY 2005
2
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V
DS S
100
V
Gate-source voltage
V
GS
±20
V
Continuous drain current @ V
GS
=10V; T
A
=25°C
(b)
@ V
GS
=10V; T
A
=70°C
(b)
@V
GS
=10V; T
A
=25°C
(a)
I
D
7.7
6.2
5
A
A
A
Pulsed drain current
(c)
I
DM
27
A
Continuous source current (body diode)
(b)
I
S
11
A
Pulsed source current (body diode)
(c)
I
S M
27
A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
4.3
34.4
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
10.1
80.8
W
mW/°C
Power dissipation at T
A
=25°C
(d)
Linear derating factor
P
D
2.15
17.2
W
mW/°C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
J unction to ambient
(a)
R
J A
29
°C/W
J unction to ambient
(b)
R
J A
12.3
°C/W
J unction to ambient
(d)
R
J A
58
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature.
(d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
相關PDF資料 |
PDF描述 |
|---|---|
| ZXMN10A11G | Connectors, Accessories; For Use With:Mini-Con-X Connectors; Accessory Type:Dust Cap RoHS Compliant: Yes |
| ZXMN10A11GFTA | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTC | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10B08E6 | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10B08E6TA | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMN10A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 100V, 2.4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes |
| ZXMN10A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 |
| ZXMN10A11G_04 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTA | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
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