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參數(shù)資料
| 型號： | ZXMD63P02XTC |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 1700 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-187AA |
| 封裝： | MSOP-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 208K |
| 代理商： | ZXMD63P02XTC |
ZXMD63P02X
44
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-20
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
μ
A
V
DS
=-20V, V
GS
=0V
Gate-Body Leakage
I
GSS
±
100
nA
V
GS
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-0.7
V
I
D
=-250
μ
A, V
DS
=
V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.27
0.40
V
GS
=-4.5V, I
D
=-1.2A
V
GS
=-2.7V, I
D
=-0.6A
Forward Transconductance (3)
g
fs
1.3
S
V
DS
=-10V,I
D
=-0.6A
DYNAMIC (3)
Input Capacitance
C
iss
290
pF
V
=-15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
120
pF
Reverse Transfer Capacitance
C
rss
50
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
3.4
ns
V
DD
=-10V, I
D
=-1.2A
R
=6.0
, R
=8.3
(Refer to test
circuit)
Rise Time
t
r
9.6
ns
Turn-Off Delay Time
t
d(off)
16.4
ns
Fall Time
t
f
20.4
ns
Total Gate Charge
Q
g
5.25
nC
V
DS
=-16V,V
GS
=-4.5V,
I
=-1.2A
(Refer to test
circuit)
Gate-Source Charge
Q
gs
1.0
nC
Gate Drain Charge
Q
gd
2.25
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25°C, I
S
=-1.2A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
21.7
ns
T
=25°C, I
=-1.2A,
di/dt= 100A/
μ
s
Reverse Recovery Charge(3)
Q
rr
9.6
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JUNE 1999
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