參數(shù)資料
型號: ZXMD63P02X
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述: 1200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MSOP-8
文件頁數(shù): 6/7頁
文件大?。?/td> 208K
代理商: ZXMD63P02X
TYPICAL CHARACTERISTICS
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
0.1
10
100
0
4
4.5
-V
DS
- Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
0
500
C
ID=-1.2A
V
5
0
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
Ciss
Coss
Crss
Vgs=0V
f=1Mhz
700
200
400
600
100
300
1
4.5
4
3.5
2.5
VDS=-16V
3.5
3
2.5
2
1.5
1
0.5
1
2
3
1.5
0.5
ZXMD63P02X
46
PROVISIONAL ISSUE A - JUNE 1999
相關PDF資料
PDF描述
ZXMD63P02XTA DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P02XTC DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03X DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03XTA DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03XTC DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
ZXMD63P02X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL PP MSOP8
ZXMD63P02XTA 功能描述:MOSFET Dual 20V P Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMD63P02XTC 功能描述:MOSFET Dual 20V P Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMD63P03X 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03X_05 制造商:ZETEX 制造商全稱:ZETEX 功能描述:DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET