參數(shù)資料
型號(hào): ZXMD63P02X
廠商: ZETEX PLC
元件分類: 小信號(hào)晶體管
英文描述: DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述: 1200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MSOP-8
文件頁數(shù): 2/7頁
文件大?。?/td> 208K
代理商: ZXMD63P02X
ZXMD63P02X
42
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
θ
JA
143
°C/W
Junction to Ambient (b)(d)
R
θ
JA
100
°C/W
Junction to Ambient (a)(e)
R
θ
JA
120
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
<
10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
V
GS
I
D
-20
±
12
-1.7
-1.35
V
Gate- Source Voltage
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25°C)(b)(d)
(V
GS
=4.5V; T
A
=70°C)(b)(d)
Pulsed Drain Current (c)(d)
A
I
DM
I
S
I
SM
P
D
-9.6
A
Continuous Source Current (Body Diode)(b)(d)
-1.4
A
Pulsed Source Current (Body Diode)(c)(d)
-9.6
A
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
0.87
6.9
W
mW/°C
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
P
D
1.04
8.3
W
mW/°C
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
PROVISIONAL ISSUE A - JUNE 1999
相關(guān)PDF資料
PDF描述
ZXMD63P02XTA DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P02XTC DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03X DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03XTA DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03XTC DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
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