參數(shù)資料
型號： ZXMC4559DN8
廠商： Zetex Semiconductor
英文描述： COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
中文描述： 互補60V的增強型MOS管
文件頁數(shù)： 4/10頁
文件大?。?/td> 282K
代理商： ZXMC4559DN8
ZXMC4559DN8
ISSUE 5 - MAY 2005
4
S E M IC O N D U C T O R S
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
R
DS (on)
60
V
I
D
=250 A, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
GS
=
20V, V
DS
=0V
I
D
=250 A, V
DS
= V
GS
V
GS
=10V, I
D
=4.5A
V
GS
=4.5V, I
D
=4.0A
V
DS
=15V,I
D
=4.5A
Zero Gate Voltage Drain Current
1.0
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
1.0
V
Static Drain-Source On-State
Resistance
(1)
Forward Transconductance
(1) (3)
DYNAMIC
(3)
0.055
0.075
g
fs
10.2
S
Input Capacitance
C
iss
C
oss
C
rss
1063
pF
V
DS
=30V, V
GS
=0V,
f=1MHz
Output Capacitance
104
pF
Reverse Transfer Capacitance
SWITCHING
(2) (3)
64
pF
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
3.5
ns
V
DD
=30V, I
D
=1A
R
G
6.0 , V
GS
=10V
Rise Time
4.1
ns
Turn-Off Delay Time
26.2
ns
Fall Time
10.6
ns
Gate Charge
11.0
nC
V
DS
=30V,V
GS
=5V,
I
D
=4.5A
Total Gate Charge
Q
g
Q
gs
Q
gd
20.4
nC
V
DS
=30V,V
GS
=10V,
I
D
=4.5A
Gate-Source Charge
4.1
nC
Gate-Drain Charge
5.1
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
0.85
1.2
V
T
J
=25°C, I
S
=5.5A,
V
GS
=0V
T
J
=25°C, I
F
=2.2A,
di/dt= 100A/ s
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
t
rr
Q
rr
22
ns
21.4
nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
300 s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMC4559DN8(2) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
ZXMC4559DN8TA 功能描述:MOSFET Comp. 60V NP-Chnl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMC4559DN8TC 功能描述:功率驅(qū)動器IC 60V TRENCH MOSFET 20V VGS P-Channel RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
ZXMC4A16DN8 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
ZXMC4A16DN8TA 功能描述:MOSFET 40V N/P-Channel Enhancement MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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