參數(shù)資料
型號(hào)： ZXMC3AM832(2)
文件頁(yè)數(shù)： 5/10頁(yè)
文件大?。?/td> 280K
代理商： ZXMC3AM832(2)
ZXMC3AM832
PROVISIONAL ISSUE E - J ULY 2004
5
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
-30
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
1
A
V
DS
=-30V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
-0.8
V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-10V, I
D
=-1.4A
V
GS
=-4.5V, I
D
=-1.1A
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.210
0.330
Forward Transconductance
(1)(3)
g
fs
2.48
S
V
DS
=-15V,I
D
=-1.4A
DYNAMIC
(3)
Input Capacitance
C
iss
204
pF
V
=-15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
39.8
pF
Reverse Transfer Capacitance
C
rss
25.8
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.5
ns
V
DD
=-15V, I
D
=-1A
R
G
=6.0
, V
GS
=-10V
Rise Time
t
r
2.8
ns
Turn-Off Delay Time
t
d(off)
11.3
ns
Fall Time
t
f
7.5
ns
Gate Charge
Q
g
2.58
nC
V
DS
=-15V,V
GS
=-5V,
I
D
=-1.4A
Total Gate Charge
Q
g
5.15
nC
DS
=-15V,V
GS
=-10V,
I
D
=-1.4A
Gate-Source Charge
Q
gs
0.65
nC
Gate-Drain Charge
Q
gd
0.92
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
-0.85
-0.95
V
T
J
=25°C, I
S
=-1.1A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
18.6
ns
T
=25°C, I
=-0.95A,
di/dt= 100A/
μ
s
Reverse Recovery Charge
(3)
Q
rr
14.8
nC
P-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
相關(guān)PDF資料
PDF描述
ZXMC3AM832TA MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3AM832TC MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
ZXMC4559DN8TA TIP REPLACEMENT .062 800 DEG
ZXMC4559DN8TC TIP REPLACEMENT .125 700 DEG
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMC3AM832TA 功能描述:MOSFET Cmp 30V NP Ch UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMC3AM832TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3AMC 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
ZXMC3AMCTA 功能描述:MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMC3F31DN8 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:30V SO8 Complementary dual enhancement mode
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*