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參數(shù)資料
| 型號(hào)： | ZXMC3A16DN8 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET |
| 中文描述： | 互補(bǔ)30V的增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 301K |
| 代理商： | ZXMC3A16DN8 |
ZXMC3A16DN8
PROVISIONAL ISSUE F - J ULY 2004
5
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
-30
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
-1.0
A
V
DS
=-30V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
1.0
V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-3.4A
Static Drain-Source On-State
Resistance
R
DS (on)
0.048
0.070
Forward Transconductance
(1)(3)
g
fs
9.2
S
V
DS
=-15V,I
D
=-4.2A
DYNAMIC
(3)
Input Capacitance
C
iss
970
pF
V
=-15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
166
pF
Reverse Transfer Capacitance
C
rss
116
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
3.8
ns
V
DD
=-15V, I
D
=-1A
R
G
=6.0
, V
GS
=-10V
Rise Time
t
r
6.1
ns
Turn-Off Delay Time
t
d(off)
35
ns
Fall Time
t
f
19
ns
Gate Charge
Q
g
12.9
nC
V
DS
=-15V,V
GS
=-5V,
I
D
=-4.2A
Total Gate Charge
Q
g
24.9
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-4.2A
Gate-Source Charge
Q
gs
2.67
nC
Gate-Drain Charge
Q
gd
3.86
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
-0.85
-0.95
V
T
J
=25°C, I
S
=-3.6A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
21.2
ns
T
=25°C, I
=-2A,
di/dt= 100A/
μ
s
Reverse Recovery Charge
(3)
Q
rr
18.7
nC
P-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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| ZXMC3A17DN8_05 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET |
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