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參數(shù)資料
| 型號： | ZXMC3A16DN8 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET |
| 中文描述： | 互補30V的增強型MOS管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 301K |
| 代理商： | ZXMC3A16DN8 |
ZXMC3A16DN8
PROVISIONAL ISSUE F - J ULY 2004
2
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient
(a)(d)
R
θ
J A
100
°C/W
J unction to Ambient
(b)(e)
R
θ
J A
70
°C/W
J unction to Ambient
(b)(d)
R
θ
J A
60
°C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER
SYMBOL
N-Channel
P-Channel
UNIT
Drain-Source Voltage
V
DS S
30
-30
V
Gate-Source Voltage
V
GS
20
20
V
Continuous Drain Current@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=70 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(a)(d)
I
D
6.4
5.1
4.9
-5.4
-4.3
-4.1
A
A
A
Pulsed Drain Current
(c)
I
DM
30
-25
A
Continuous Source Current (Body Diode)
(b)
I
S
3.4
-3.2
A
Pulsed Source Current (Body Diode)
(c)
I
S M
30
-25
A
Power Dissipation at TA=25°C
(a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Power Dissipation at TA=25°C
(a)(e)
Linear Derating Factor
P
D
1.8
14
W
mW/°C
Power Dissipation at TA=25°C
(b)(d)
Linear Derating Factor
P
D
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
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| ZXMC3A16DN8_05 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET |
| ZXMC3A16DN8TA | 功能描述:MOSFET N and P Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMC3A16DN8TC | 功能描述:MOSFET Cmp 30V NP Ch UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMC3A17DN8 | 功能描述:MOSFET N and P Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMC3A17DN8_05 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET |
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