參數(shù)資料
型號(hào): ZXMC3A16DN8
廠商: Zetex Semiconductor
英文描述: COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
中文描述: 互補(bǔ)30V的增強(qiáng)型MOS管
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 301K
代理商: ZXMC3A16DN8
ZXMC3A16DN8
PROVISIONAL ISSUE F - J ULY 2004
3
CHARACTERISTICS
相關(guān)PDF資料
PDF描述
ZXMC3A16DN8TA COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A16DN8TC COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A17DN8TA COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A17DN8TC COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMC3A16DN8_05 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A16DN8TA 功能描述:MOSFET N and P Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMC3A16DN8TC 功能描述:MOSFET Cmp 30V NP Ch UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMC3A17DN8 功能描述:MOSFET N and P Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMC3A17DN8_05 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET