參數(shù)資料
型號(hào)： ZVP3306
廠(chǎng)商： Zetex Semiconductor
英文描述： P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
中文描述： P溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 81K
代理商： ZVP3306
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
*
60 Volt V
DS
*
R
DS(on)
=14
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
-60
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
-160
mA
-1.6
A
Gate Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
P
tot
T
j
:T
stg
625
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-60
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5
-50
μ
A
μ
A
V
DS
=-60 V, V
GS
=0
V
DS
=-48 V, V
GS
=0V, T=125°C
(2)
On-State Drain Current(1)
I
D(on)
-400
mA
V
DS
=-18 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
14
V
GS
=-10V,I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
60
mS
V
DS
=-18V,I
D
=-200mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
≈
-18V, I
D
=-200mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2%
(2) Sample test.
(
3
)
Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP3306A
D
3-429
相關(guān)PDF資料
PDF描述
ZVP3306A Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PC06; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
ZVP3306F Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PC06; No. of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
ZVP3310 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVP3310A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVP3310F P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZVP3306A 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP3306A 制造商:Diodes Incorporated 功能描述:MOSFET P E-LINE
ZVP3306ASTOA 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP3306ASTOB 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP3306ASTZ 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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