參數(shù)資料
型號： ZVP2120G
廠商： ZETEX PLC
元件分類： JFETs
英文描述： P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
中文描述： 0.3 A, 200 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： SOT-223, 4 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 74K
代理商： ZVP2120G
SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - OCTOBER 1995
%
FEATURES
*
200 Volt V
DS
*
R
DS(on)
=25
PARTMARKING DETAIL
COMPLEMENTARY TYPE
ZVP2120
ZVN2120G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
-200
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
-200
mA
-1.2
A
Gate Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
P
tot
T
j
:T
stg
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-200
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
-20
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=-200 V, V
GS
=0
V
DS
=-160 V, V
GS
=0V, T=125°C
(2)
Zero Gate Voltage Drain
Current
I
DSS
-10
-100
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS(on)
-300
mA
V
DS
=-25 V, V
GS
=-10V
V
GS
=-10V, I
D
=-150mA
Static Drain-Source On-State
Resistance (1)
25
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V, I
D
=-150mA
Input Capacitance (2)
C
iss
C
oss
100
pF
Common Source Output
Capacitance (2)
25
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2)
C
rss
t
d(on)
t
r
t
d(off)
t
f
7
pF
Turn-On Delay Time (2)(3)
7
ns
V
DD
≈
-25V, I
D
=-150mA
Rise Time (2)(3)
15
ns
Turn-Off Delay Time (2)(3)
12
ns
Fall Time (2)(3)
15
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVP2120G
D
D
S
G
3 - 431
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
ZVP2120GTA 功能描述:MOSFET P-Chnl 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP2120GTC 功能描述:MOSFET P-Chnl 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP2120L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 300MA I(D) | TO-220
ZVP2120Z 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 170MA I(D) | SOT-89
ZVP3306 制造商:ZETEX 制造商全稱:ZETEX 功能描述:P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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