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參數(shù)資料
| 型號： | ZVP2110 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 中文描述： | P溝道增強(qiáng)型場效應(yīng)管垂直的DMOS |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 65K |
| 代理商： | ZVP2110 |
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
100 Volt V
DS
*
R
DS(on)
=8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
-100
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
-230
mA
-3
A
Gate Source Voltage
±
20
700
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX . UNIT
CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DS S
-100
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS (th)
-1.5
-3.5
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GS S
I
DS S
20
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=-100 V, V
GS
=0
V
DS
=-80 V, V
GS
=0V, T=125°C
(2)
V
DS
=-25 V, V
GS
=-10V
V
GS
=-10V,I
D
=-375mA
Zero Gate Voltage Drain
Current
-1
-100
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS (on)
-750
mA
S tatic Drain-Source On-State
Resistance (1)
8
Forward Transconductance
(1)(2)
g
fs
125
mS
V
DS
=-25V,I
D
=-375mA
Input Capacitance (2)
C
iss
C
oss
100
pF
Common Source Output
Capacitance (2)
35
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
10
pF
Turn-On Delay Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
7
ns
V
DD
≈
-25V, I
D
=-375mA
Rise Time (2)(3)
15
ns
Turn-Off Delay Time (2)(3)
12
ns
Fall Time (2)(3)
15
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2%
(2) Sample test.
(
3
)
Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
3-421
D
ZVP2110A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZVP2110A | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PC06; No. of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
| ZVP2110G | CONNECTOR |
| ZVP2120A | PCSE 32C 32#20 SKT PLUG |
| ZVP2120G | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| ZVP3306 | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZVP2110A | 功能描述:MOSFET P-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVP2110AM1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 230MA I(D) | SO |
| ZVP2110ASTOA | 功能描述:MOSFET P-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVP2110ASTOB | 功能描述:MOSFET P-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVP2110ASTZ | 功能描述:MOSFET P-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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