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參數(shù)資料
| 型號： | ZVN4525Z(1) |
| 廠商： | Zetex Semiconductor |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 431K |
| 代理商： | ZVN4525Z(1) |
ISSUE 1 - MARCH 2001
ZVN4525Z
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
250
V
Gate Source Voltage
V
GS
I
D
I
D
±
40
V
Continuous Drain Current (V
GS
=10V; TA=25°C)(a)
(V
GS
=10V; TA=70°C)(a)
240
192
mA
mA
Pulsed Drain Current (c)
I
DM
1.44
A
Continuous Source Current (Body Diode)
I
S
1.1
A
Pulsed Source Current (Body Diode)
I
SM
P
D
1.44
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
1.2
9.6
W
mW/°C
Operating and Storage Temperature Range
T
j
:
T
stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θ
JA
103
°C/W
Junction to Ambient (b)
R
θ
JA
50
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
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