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參數(shù)資料
| 型號： | ZTX788A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | 3000 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 47K |
| 代理商： | ZTX788A |
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94
FEATURES
*
15 Volt V
CEO
*
Gain of 200 at I
C
=2 Amps
*
Very low saturation voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-15
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-10
A
Continuous Collector Current
I
C
-3
A
Practical Power Dissipation*
P
totp
1.5
W
Power Dissipation
at T
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=-100
μ
A
Collector-Base Breakdown
Voltage
V
(BR)CBO
-20
-30
V
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-15
-20
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
-8.5
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-0.1
-10
μ
A
μ
A
μ
A
V
CB
=-10V
V
CB
=-10V, T
amb
=100°C
V
EB
=-4V
I
C
=-0.1A, I
=-2mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-3A, I
B
=-200mA*
I
C
=-2A, I
B
=-20mA*
Emitter Cut-Off Current
I
EBO
V
CE(sat)
-0.1
Collector-Emitter Saturation
Voltage
-0.025
-0.25
-0.28
-0.035
-0.32
-0.33
V
V
V
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.85
-1.0
V
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
V
IC=-2A, V
CE
=-3V*
Static Forward Current
Transfer Ratio
h
FE
300
250
200
80
800
I
C
=-10mA, V
=-1V*
I
C
=-1A, V
CE
=-1V*
I
C
=-2A, V
CE
=-1V*
I
C
=-10A, V
CE
=-2V*
E-Line
TO92 Compatible
3-271
C
ZTX788A
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| ZTX788ASTOA | 功能描述:兩極晶體管 - BJT PNP Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX788ASTOB | 功能描述:兩極晶體管 - BJT PNP Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX788ASTZ | 功能描述:兩極晶體管 - BJT PNP Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX788B | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX788B | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP E-LINE |
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