參數(shù)資料
型號： ZTX749A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： PNP Low Saturation Transistor
中文描述： 2000 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AE
封裝： TO-226AE, 3 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 40K
代理商： ZTX749A
2003 Fairchild Semiconductor Corporation
Rev. C, August 2003
Z
Absolute Maximum Ratings
T
A
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150
°
C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
BV
CBO
Collector-Base Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
R
θ
JA
Thermal Resistance, Junction to Ambient
Parameter
Value
-35
-45
-5
-2
-55 ~ +150
Units
V
V
V
A
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= -10mA
I
C
= -100
μ
A
I
E
= -100
μ
A
V
CB
= -30V
V
CB
= -30V, T
A
= 100
°
C
V
EB
= -4V
-35
-45
-5
V
V
V
nA
μ
A
nA
-100
-10
-100
I
EBO
On Characteristics*
h
FE
Emitter Cutoff Current
DC Current Gain
I
C
= -50mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -6A, V
CE
= -2V
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -2V
70
100
75
15
300
V
CE
(sat)
Collector-Emitter Saturation Voltage
-300
-500
-1.25
-1
mV
V
BE
(sat)
V
BE
(on)
Small-Signal Characteristics
C
obo
Output Capacitance
f
T
Transition Frequency
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
V
V
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= -100mA, V
CE
= -5V
f = 100MHz
100
P
F
100
Parameter
Max.
1
125
Units
W
°
C/W
ZTX749A
PNP Low Saturation Transistor
This device are designed with high current gain and low saturation
voltage with collector currents up to 2A continuous.
CBE
TO-226
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZTX749A_D26Z 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZTX749A_J05Z 功能描述:兩極晶體管 - BJT 35V PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZTX749A_J61Z 功能描述:兩極晶體管 - BJT 35V PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZTX749A_Q 功能描述:兩極晶體管 - BJT 35V PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZTX749DA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | CHIP
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