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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
August 2006 - Rev 31-Aug-06
19.0-26.0 GHz GaAs Transmitter
QFN, 7x7mm
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21)
LO Input Drive (P
LO
)
Image Rejection
2xLO Leakage @ RF
Output Third Order Intercept (OIP3)
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd1=4.0V, Vg=-0.1V Typical)
Supply Current (Id2) (Vd2=4.0V, Vg=-0.1V Typical)
Page 1 of 6
Sub-harmonic Transmitter
Integrated IR Mixer, LO Buffer & Output Amplifier
2.0 dBm LO Drive Level
15.0 dB Image Rejection, 10.0 dB Conversion Gain
7x7 mm, QFN
Features
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5.0 VDC
320, 165 mA
+0.5 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dBm
dBm
VDC
VDC
VDC
mA
mA
Min.
19.0
19.0
8.0
DC
-
-
-
-
-
-
-
-
-1.2
-
-
Typ.
-
-
-
-
14.0
10.0
+2.0
20.0
-12.0
+23.0
+4.0
+4.0
-0.1
230
116
Max.
26.0
26.0
14.5
3.0
-
-
-
-
-
-
+4.5
+4.5
+0.3
280
140
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
U1003-QD
Mimix Broadband
’
s 19.0-26.0 GHz GaAs MMIC transmitter has a
+20.0 dBm output third order intercept and 15.0 dB image
rejection across the band. This device is an image reject
sub-harmonic anti-parallel diode mixer followed by a balanced
two stage output amplifier and includes an integrated LO buffer
amplifier. The image reject mixer reduces the need for
unwanted sideband filtering before the power amplifier. The
use of a sub-harmonic mixer makes the provision of the LO
easier than for fundamental mixers at these frequencies. I and Q
mixer inputs are provided and an external 90 degree hybrid is
required to select the desired sideband. This MMIC uses Mimix
Broadband
’
s 0.15
μ
m GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure high
repeatability and uniformity. The device comes in a 7x7mm QFN
surface mount laminate package that is RoHS compliant. This
device is well suited for Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
General Description