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參數(shù)資料
| 型號(hào)： | XU1002 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 18.0-25.0 GHz GaAs MMIC Transmitter |
| 中文描述： | RF/MICROWAVE UP CONVERTER |
| 封裝： | DIE-10 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 342K |
| 代理商： | XU1002 |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 5 of 8
May 2005 - Rev 13-May-05
18.0-25.0 GHz GaAs MMIC
Transmitter
U1002
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions:
Vd1=3.5V, Vd2=4.0V, Id1=230 mA, Id2=116 mA
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd1=3.5V,
Id1=230mA and Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents constant as the RF power and
temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints,
the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used
to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage
needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
- Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the
device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
Typical Application
Mimix
Broadband MMIC-based 18.0-25.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 25.0 GHz)
IF IN
17.7-19.7 GHz
XB1004
XP1013
XU1002
Sideband
Reject
RF Out
17.7-19.7 GHz
LO(+2.0dBm)
7.85-8.85 GHz (USB Operation)
9.85-10.85 GHz (LSB Operation)
Mimix Broadband's 18.0-25.0 GHz XU1002 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation
schemes up to 16 QAM. The transmitter can be used in upper and lower sideband applications from 18.0-25.0 GHz.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XU1003-QD | 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1003-QD-0N00 | 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1003-QD-0N0T | 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1003-QD-EV1 | 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1003 | 19.0-26.0 GHz GaAs MMIC Transmitter |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XU1002-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-25.0 GHz GaAs MMIC Transmitter |
| XU1002-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-25.0 GHz GaAs MMIC Transmitter |
| XU1002-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-25.0 GHz GaAs MMIC Transmitter |
| XU1002-QD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1002-QD_07 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm |
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