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參數(shù)資料
| 型號： | XU1002-QD-0N00 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm |
| 中文描述： | RF/MICROWAVE UP CONVERTER |
| 封裝： | 7 X 7 MM, ROHS COMPLIANT, QFN-44 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 328K |
| 代理商： | XU1002-QD-0N00 |
November 2006 - Rev 21-Nov-06
QFN, 7x7mm
17.0-25.0 GHz GaAs Transmitter
U1002-QD
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 5 of 7
Typical Application
Mimix
Broadband MMIC-based 19.0-26.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 26 GHz)
IF IN
2 GHz
XB1004
XP1013
XU1002-QD
Sideband
Reject
RF Out
17.7-23.6 GHz
LO(+2.0dBm)
7.85-10.8 GHz (USB Operation)
9.85-10.85 GHz (LSB Operation)
Mimix Broadband's 17.0-25.0 GHz XU1002-QD GaAs MMIC Transmitter can be used in saturated radio applications and
linear modulation schemes up to 16 QAM. The transmitter can be used in upper and lower sideband applications from
19.0-26.0 GHz.
MTTF Tables
MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.
Bias Conditions:
Vd1=4.0V, Vd2=4.0V, Id1=230 mA, Id2=116 mA
App Note [1] Biasing
- This device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=230mA and Vd2=4.0V,
Id2=116mA. It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives
the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may
be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed
to do this is -0.1V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
MTTF vs. Backplate Temperature
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
20
30
40
50
60
70
80
90
100
110
Temperature (degrees)
M
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XU1002-QD-0N0T | 17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1002-QD-EV1 | 17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1002 | 18.0-25.0 GHz GaAs MMIC Transmitter |
| XU1003-QD | 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1003-QD-0N00 | 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XU1002-QD-0N0T | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1002-QD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1003 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:19.0-26.0 GHz GaAs MMIC Transmitter |
| XU1003-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:19.0-26.0 GHz GaAs MMIC Transmitter |
| XU1003-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:19.0-26.0 GHz GaAs MMIC Transmitter |
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