![](http://datasheet.mmic.net.cn/390000/XU1002-QD_datasheet_16839483/XU1002-QD_1.png)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
November 2006 - Rev 21-Nov-06
QFN, 7x7mm
17.0-25.0 GHz GaAs Transmitter
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21)
LO Input Drive (P
LO
)
Image Rejection
2xLO Leakage @ RF
Output Third Order Intercept (OIP3)
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd1=4.0V, Vg=-0.1V Typical)
Supply Current (Id2) (Vd2=4.0V, Vg=-0.1V Typical)
Page 1 of 7
Sub-harmonic Transmitter
Integrated IR Mixer, LO Buffer & Output Amplifier
+13 dBm P1dB
2.0 dBm LO Drive Level
20.0 dB Image Rejection, 9.0 dB Conversion Gain
7x7 mm, QFN
Features
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5.0 VDC
320, 165 mA
+0.5 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dBm
dBm
VDC
VDC
VDC
mA
mA
Min.
17.0
17.0
7.0
DC
-
-
-
-
-
-
-
-
-1.2
-
-
Typ.
-
-
-
-
14.0
9.0
+2.0
20.0
-10.0
+23.0
+4.0
+4.0
-0.1
230
116
Max.
25.0
21.0
14.0
3.0
-
-
-
-
-
-
+4.5
+4.5
+0.3
280
140
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
U1002-QD
Mimix Broadband
’
s 17.0-25.0 GHz GaAs MMIC transmitter has a
+13.0 dBm output P1dB and 20.0 dB image rejection across the
band. This device is an image reject sub-harmonic anti-parallel
diode mixer followed by a balanced two stage output amplifier
and includes an integrated LO buffer amplifier. The image reject
mixer reduces the need for unwanted sideband filtering before
the power amplifier. The use of a sub-harmonic mixer makes the
provision of the LO easier than for fundamental mixers at these
frequencies. I and Q mixer inputs are provided and an external
90 degree hybrid is required to select the desired sideband. This
MMIC uses Mimix Broadband
’
s 0.15
μ
m GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity. The
device comes in a 7x7mm QFN surface mount laminate
package that is RoHS compliant. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
General Description