• <dl id="7p0u0"><s id="7p0u0"><dl id="7p0u0"></dl></s></dl>
    <rt id="7p0u0"><legend id="7p0u0"></legend></rt>
    <thead id="7p0u0"><xmp id="7p0u0"><thead id="7p0u0"></thead>
  • 參數(shù)資料
    型號: XN02215(XN2215)
    英文描述: XN02215 (XN2215) - Composite Transistors
    中文描述: XN02215(XN2215) -復(fù)合晶體管
    文件頁數(shù): 1/3頁
    文件大?。?/td> 64K
    代理商: XN02215(XN2215)
    1
    Composite Transistors
    XN02212 (XN2212)
    Silicon NPN epitaxial planer transistor
    For switching/digital circuits
    I Features
    G Two elements incorporated into one package.
    (Base-coupled transistors with built-in resistor)
    G Reduction of the mounting area and assembly cost by one half.
    I Basic Part Number of Element
    G UNR1212(UN1212)
    × 2 elements
    I Absolute Maximum Ratings (Ta=25C)
    1 : Collector (Tr1)
    4 : Base
    2 : Collector (Tr2)
    5 : Emitter (Tr1)
    3 : Emitter (Tr2)
    EIAJ : SC-74A
    Mini Type Pakage (5–pin)
    Unit: mm
    Marking Symbol:
    AX
    Internal Connection
    Parameter
    Symbol
    Ratings
    Unit
    Collector to base voltage
    VCBO
    50
    V
    Collector to emitter voltage
    VCEO
    50
    V
    Collector current
    IC
    100
    mA
    Total power dissipation
    PT
    300
    mW
    Junction temperature
    Tj
    150
    C
    Storage temperature
    Tstg
    –55 to +150
    C
    Rating
    of
    element
    Overall
    2.8
    +0.2
    -0.3
    1.5
    0.65
    ±0.15
    0.65
    ±0.15
    1
    5
    4
    3
    2
    1.45
    ±
    0.1
    0.95
    1.9
    ±
    0.1
    0.8
    +0.25
    -0.05
    0.3
    +0.1 -
    0.05
    0.16
    0
    to
    0.1
    +0.1 -
    0.06
    2.9
    +0.2 -
    0.05
    1.1
    +0.2 -
    0.1
    0.4
    ±0.2
    0.1 to 0.3
    I Electrical Characteristics (Ta=25C)
    Parameter
    Symbol
    Conditions
    min
    typ
    max
    Unit
    Collector to base voltage
    VCBO
    IC = 10
    A, I
    E = 0
    50
    V
    Collector to emitter voltage
    VCEO
    IC = 2mA, IB = 0
    50
    V
    Collector cutoff current
    ICBO
    VCB = 50V, IE = 0
    0.1
    A
    ICEO
    VCE = 50V, IB = 0
    0.5
    A
    Emitter cutoff current
    IEBO
    VEB = 6V, IC = 0
    0.5
    mA
    Forward current transfer ratio
    hFE
    VCE = 10V, IC = 5mA
    60
    Forward current transfer hFE ratio
    hFE (small/large)
    *1
    VCE = 10V, IC = 5mA
    0.5
    0.99
    Collector to emitter saturation voltage
    VCE(sat)
    IC = 10mA, IB = 0.3mA
    0.25
    V
    Output voltage high level
    VOH
    VCC = 5V, VB = 0.5V, RL = 1k
    4.9
    V
    Output voltage low level
    VOL
    VCC = 5V, VB = 2.5V, RL = 1k
    0.2
    V
    Transition frequency
    fT
    VCB = 10V, IE = –2mA, f = 200MHz
    150
    MHz
    Input resistance
    R1
    –30%
    22
    +30%
    k
    Resistance ratio
    R1/R2
    0.8
    1.0
    1.2
    5
    Tr2
    Tr1
    4
    32
    1
    *1 Ratio between 2 elements
    Note.) The Part number in the Parenthesis shows conventional part number.
    相關(guān)PDF資料
    PDF描述
    XN02216(XN2216) 複合デバイス - 複合トランジスタ
    XN02401(XN2401) 複合デバイス - 複合トランジスタ
    XN04110(XN4110) 複合デバイス - 複合トランジスタ
    XN04112(XN4112) Composite Device - Composite Transistors
    XN04113(XN4113) Composite Device - Composite Transistors
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    XN02216 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-74A
    XN02216(XN2216) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 複合トランジスタ
    XN02401 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor
    XN02401(XN2401) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 複合トランジスタ