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參數(shù)資料
| 型號(hào)： | XN01509(XN1509) |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復(fù)合設(shè)備-復(fù)合晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | XN01509(XN1509) |
1
Composite Transistors
XN01509 (XN1509)
Silicon NPN epitaxial planer transistor
For high-frequency amplification
I Features
G Two elements incorporated into one package.
(Emitter-coupled transistors)
G Reduction of the mounting area and assembly cost by one half.
I Basic Part Number of Element
G 2SC4561
× 2 elements
I Absolute Maximum Ratings (Ta=25C)
1 : Collector (Tr1)
4 : Emitter
2 : Collector (Tr2)
5 : Base (Tr1)
3 : Base (Tr2)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Unit: mm
Marking Symbol:
AN
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5V
Collector current
IC
50
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
–55 to +150
C
Rating
of
element
Overall
2.8
+0.2
-0.3
1.5
0.65
±0.15
0.65
±0.15
1
5
4
3
2
1.45
±
0.1
0.95
1.9
±
0.1
0.8
+0.25
-0.05
0.3
+0.1 -
0.05
0.16
0
to
0.1
+0.1 -
0.06
2.9
+0.2 -
0.05
1.1
+0.2 -
0.1
0.4
±0.2
0.1 to 0.3
I Electrical Characteristics (Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10
A, I
E = 0
50
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
50
V
Emitter to base voltage
VEBO
IE = 10A, IC = 0
5
V
Collector cutoff current
ICBO
VCB = 10V, IE = 0
0.1
A
ICEO
VCE = 10V, IB = 0
100
A
Forward current transfer ratio
hFE
VCE = 10V, IC = 2mA
200
500
Forward current transfer hFE ratio
hFE (small/large)
*1
VCE = 10V, IC = 2mA
0.5
0.99
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 1mA
0.06
0.3
V
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
250
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
1.5
pF
*1 Ratio between 2 elements
51
Tr2
Tr1
4
32
Note.) The Part number in the Parenthesis shows conventional part number.
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| XN01558(XN1558) | 複合デバイス － 複合トランジスタ |
| XN02212 | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-74A |
| XN02212(XN2212) | 複合デバイス － 複合トランジスタ |
| XN02215 | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-74A |
| XN02215(XN2215) | XN02215 (XN2215) - Composite Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XN01531 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | COMM EMITTER | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-25 |
| XN01531(XN1531) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Composite Transistors |
| XN0153100L | 功能描述:TRANS ARRAY NPN/NPN MINI-5P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| XN01558 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type For low-frequency amplification |
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