
November 13, 1998 (Version 1.2) 
3
Absolute Maximum Ratings
Recommended Operation Conditions
Quality and Reliability Characteristics
DC Characteristics Over Recommended Operating Conditions
Symbol 
V
CC
V
IN
V
TS
T
STG
T
SOL
T
J
Note 1: Maximum DC undershoot below GND must be limited to either 0.5 V or 10 mA, whichever is easier to achieve. During 
transitions, the device pins may undershoot to -2.0 V or overshoot to +7.0 V, provided this over- or undershoot lasts less 
than 10 ns and with the forcing current being limited to 200 mA.
Note 2: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress 
ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating 
Conditions is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time may affect device 
reliability.
Description 
Value 
-0.5 to 4.0 
-0.5 to 5.5 
-0.5 to 5.5 
-65 to +150
+260
+150
Units
V
V
V
o
C
o
C
o
C
Supply voltage relative to GND 
Input voltage relative to GND (Note 1) 
Voltage applied to 3-state output (Note 1) 
Storage temperature (ambient) 
Maximum soldering temperature (10s @ 1/16 in. = 1.5 mm) 
Junction temperature 
Symbol 
V
CCINT
Parameter 
Min 
3.0
3.0
3.0 
2.3 
0 
2.0 
0 
Max 
3.6
3.6
3.6 
2.7 
0.80 
5.5 
V
CCIO
Units
V
V
V
V
V
V
V
Supply voltage for internal logic 
and input buffers
Supply voltage for output drivers for 3.3 V operation 
Supply voltage for output drivers for 2.5 V operation 
Low-level input voltage 
High-level input voltage 
Output voltage 
Commercial T
A
 = 0
o
C to 70
o
C
Industrial T
A
 = -40
o
C to +85
o
C
V
CCIO
V
IL
V
IH
V
O
Symbol 
t
DR
N
PE
V
ESD
Parameter 
Min 
20 
10,000 
2,000 
Max 
- 
- 
- 
Units
Years
Cycles
Volts
Data Retention 
Program/Erase Cycles (Endurance) 
Electrostatic Discharge (ESD) 
Symbol 
V
OH
Parameter 
Test Conditions 
I
OH
 = -4.0 mA 
I
OH 
= -500 
μ
A
I
OL
 = 8.0 mA 
I
OL
 = 500 
μ
A
V
CC
 = Max
V
IN
 = GND or V
CC
V
CC
 = Max
V
IN
 = GND or V
CC
V
IN
 = GND
f = 1.0 MHz
V
I
 = GND, No load
f = 1.0 MHz
Min 
2.4 
Max 
Units
V
V
V
V
μ
A
Output high voltage for 3.3 V outputs 
Output high voltage for 2.5 V outputs 
Output low voltage for 3.3 V outputs 
Output low voltage for 2.5 V outputs 
Input leakage current 
90% V
CCIO
V
OL
0.4 
0.4
± 10.0 
I
IL
I
IH
I/O high-Z leakage current 
± 10.0 
μ
A
C
IN
I/O capacitance 
10.0 
pF
I
CC
Operating Supply Current
(low power mode, active)
45 
ma