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參數(shù)資料
| 型號(hào)： | X3211 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | LINEAR INTEGRATED CIRCUIT |
| 中文描述： | 線性集成電路 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | X3211 |
UTC X3211
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Supply Current
Drain Current (per FET) (set by R
CAL
)
Input Voltage (V
POL
)
Operating Temperature
Storage Temperature
Power Disspation(Ta=25
°
C)
ELECTRICAL CHARACTERISTICS
(
Ta = 25
°
C,Vcc=5V,I
D
=10mA, R
CAL
=33k
Ω
Unless otherwise specified)
PARAMETER
SYMBOL
Supply Voltage
Vcc
LINEAR INTEGRATED CIRCUIT
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R122-004,C
SYMBOL
Vcc
I
CC
I
D
V
IN
Topr
T
Stg
P
D
VALUE
-0.6~12
100
0~15
25 continuous
-40~70
-50~85
500
UNIT
V
mA
mA
V
°
C
°
C
mW
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
5
10
Supply Current
I
CC
I
D1
to I
D3
=0
I
D1
=0, I
D2
to I
D3
=10mA,V
POL
=14V
I
D2
=0, I
D1
to I
D3
=10mA,V
POL
=15.5V
I
D1
to I
D3
=0,I
LB
=10mA
I
D1
to I
D3
=0,I
HB
=10mA
(Internally generated) I
SUB
=0
6
25
25
16
16
-3
15
35
35
25
25
-2.5
-2.4
0.02
0.005
800
mA
mA
mA
mA
mA
V
V
Vpkpk
Vpkpk
kHz
Substrate Voltage
V
SUB
I
SUB
= -200
μ
A
-3.5
Output Noise
Drain Voltage
Gate Voltage
Oscillator Freq
E
ND
E
NG
f
O
C
G
=4.7nF,C
D
=10nF
C
G
=4.7nF,C
D
=10nF
200
350
GATE CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
μ
A
Output Current Range
I
GO
-30
2000
Output Voltage
Gate 1 Off
Low
High
Output Voltage
Gate 2 Off
Low
High
Output Voltage
Gate 3 Low
High
V
G1O
V
G1L
V
G1H
V
G2O
V
G2L
V
G2H
V
G3L
V
G3H
I
D1
=0mA, V
POL
=14V, I
GO1
=0
μ
A
I
D1
=12mA, V
POL
=15.5V, I
GO1
=-10
μ
A
I
D1
=8mA, V
POL
=15.5V, I
GO1
=0
μ
A
I
D2
=0mA, V
POL
=15.5V, I
GO2
=0
μ
A
I
D2
=12mA, V
POL
=14V, I
GO2
=-10
μ
A
I
D2
=8mA, V
POL
=14V, I
GO2
=0
μ
A
-0.05
-2.7
0.4
-0.05
-2.7
0.4
-3.5
0.4
0
-2.4
0.75
0
-2.4
0.75
-2.9
0.75
0.05
-2
1.0
0.05
-2
1.0
-2
1.0
V
V
I
D3
=12mA, I
GO3
=-10
μ
A
I
D3
=8mA, I
GO3
=0
μ
A
V
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