參數(shù)資料
型號(hào)： X28HT010W
廠商： INTERSIL CORP
元件分類： DRAM
英文描述： 5V, Byte Alterable EEPROM
中文描述： 128K X 8 EEPROM 5V, 200 ns, UUC
封裝： WAFER
文件頁(yè)數(shù)： 10/20頁(yè)
文件大?。?/td> 444K
代理商： X28HT010W
10
FN8105.1
February 12, 2007
Absolute Maximum Ratings
Recommended Operating Conditions
Temperature under bias
X28C010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-10°C to +85°C
X28C010I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
X28C010M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
X28HT010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +175°C
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Voltage on any pin with respect to V
SS
. . . . . . . . . . . . . . -1V to +7V
D.C. output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Lead temperature
(soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+300°C
Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C tp +85°C
Military . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5V ±10%
High Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +175°C
CAUTION: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of
the device at these or any other conditions (above those indicated in the operational sections of this specification) is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
DC Electrical Specifications
Over the recommended operating conditions, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
I
CC
V
CC
Current (Active) (TTL Inputs)
CE = OE = V
IL
, WE = V
IH
, All I/O’s = Open,
Address Inputs = 0.4V/2.4V Levels @ f = 5MHz
50
mA
I
SB1
I
SB2
V
CC
Current (Standby) (TTL Inputs)
V
CC
Current (Standby) (CMOS
Inputs)
CE = V
IH
, OE = V
IL
, All I/O’s = Open, Other Inputs = V
IH
CE = V
CC
- 0.3V, OE = V
IL
, All I/O’s = Open,
Other Inputs = V
CC
V
IN
= V
SS
to V
CC
V
IN
= V
SS
to V
CC
(Note 2)
V
OUT
= V
SS
to V
CC
, CE = V
IH
V
OUT
= V
SS
to V
CC
, CE = V
IH
(Note 2)
3
mA
500
μA
I
LI
Input Leakage Current
10
μA
20
μA
I
LO
Output Leakage Current
10
μA
20
μA
V
lL
(Note 1) Input LOW Voltage
-1
0.8
V
(Note 2)
-1
0.6
V
V
IH
(Note 1) Input HIGH Voltage
2
V
CC
+ 1
V
CC
+ 1
0.4
V
(Note 2)
2.2
V
V
OL
Output LOW Voltage
I
OL
= 2.1mA
I
OL
= 1mA (Note 2)
I
OH
= -400μA
I
OH
= -400μA
V
BB
= -3V ±10% (Note 2)
V
0.5
V
V
OH
Output HIGH Voltage
2.4
V
2.6
V
I
BB
Back Bias Current
200
μA
NOTE:
1. V
IL
min. and V
IH
max. are for reference only and are not tested.
2. X28HT010W
Power-Up Timing
SYMBOL
PARAMETER
MAX
UNIT
t
PUR
(Note 3)
t
PUW
(Note 3)
Power-up to Read operation
100
μs
Power-up to Write operation
5
ms
Capacitance
T
A
= +25°C, f = 1MHz, V
CC
= 5V
SYMBOL
PARAMETER
TEST CONDITIONS
MAX
UNIT
C
I/O
(Note 3)
C
IN
(Note 3)
NOTE:
3. This parameter is periodically sampled and not 100% tested.
Input/Output capacitance
V
I/O
= 0V
V
IN
= 0V
10
pF
Input capacitance
10
pF
X28C010, X28HT010
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