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參數(shù)資料
| 型號： | WV3HG32M72EER403AD6SG |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 180K |
| 代理商： | WV3HG32M72EER403AD6SG |
7
WV3HG32M72EER-AD6
September 2005
Rev. 1
PRELIMINARY
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
AC TIMING PARAMETERS
0°C ≤ TCASE < +85°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V
Parameter
Symbol
534
403
Unit
Min
Max
Min
Max
Clock
Clock cycle time
CL=4
tCK(4)
3,750
8,000
5,000
8,000
ps
CL=3
tCK(3)
5,000
8,000
5,000
8,000
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
tCK
Half clock period
tHP
MIN (tCH, tCL)
MIN (tCH, tCL)ps
Clock jitter
tJIT
TBD
ps
Data
DQ output access time from CK/CK#
tAC
-500
+500
-600
+600
ps
Data-out high impedance window from CK/CK#
tHZ
tAC(MAX)
ps
Data-out low-impedance window from CK/CK#
tLZ
tAC(MN)
tAC(MAX)
tAC(MN)
tAC(MAX)
ps
DQ and DM input setup time relative to DQS
tDS
100
150
DQ and DM input hold time relative to DQS
tQH
225
275
DQ and DM input pulse width (for each input)
tDIPW
0.35
tCK
Data hold skew factor
tQHS
400
450
ps
DQ-DQS hold, DQS to rst DQ to go nonvalid, per access
tHQ
tHP - tQHS
ps
Data valid output window (DVW)
tDVW
tQH - tDQSQ
ns
Data
Strobe
DQS input high pulse width
tDQSH
0.35
tCK
DQS input low pulse width
tDQSL
0.35
tCK
DQS output access time fromCK/CK#
tDQSCK
-450
+450
-500
+500
Ps
DQS falling edge to CK rising - setup time
tDSS
0.2
tCK
DQS falling edge from CK rising - hold time
tDSH
0.2
tCK
O DQS-DQ skew, DOS to last DQ valid, per group, per access
tDQSQ
300
350
ps
DQS read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
DQS read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
DQS write preamble setup time
tWPRES
00
ps
DQS write preamble
tWPRE
0.35
tCK
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
Write command to rst DQS latching transition
tDQSS
WL-0.25
WL+0.25
WL-0.25
WL+0.25
tCK
IDD specication is based on SAMSUNG components. Other DRAM manufacturers specication may be different.
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