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參數(shù)資料
| 型號(hào)： | WV3EG64M64ETSU403D4IMG |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.65 ns, ZMA200 |
| 封裝： | ROHS COMPLIANT, SODIMM-200 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 177K |
| 代理商： | WV3EG64M64ETSU403D4IMG |
WV3EG64M64ETSU-D4
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
March 2006
Rev. 0
PRELIMINARY
INPUT/OUTPUT CAPACITANCE
TA = 25°C, f = 100MHz
Parameter
Symbol
Min
Max
Units
Input capacitance (A0 ~ A12, BA0 ~ BA1, RAS#, CAS# WE#)
CIN1
20
28
pF
Input capacitance (CKE0)
CIN2
20
28
pF
Input capacitance (CS0#)
CIN3
20
28
pF
Input capacitance (CK0, CK0#, CK1, CK1#)
CIN4
12
16
pF
Input capacitance (DM0 ~ DM7)
CIN5
89
pF
Input capacitance (DQ0 ~ DQ63), (DQS0 ~ DQS7)
COUT1
89
pF
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed.
Functional operation should be restricted to recommended operating condition.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
AC OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Units
Input High (Logic 1) Voltage
VIH(AC)
VREF + 0.31
V
Input Low (Logic 0) Voltage
VIL(AC)
VREF - 0.31
V
Input Differential Voltage, CK and CK# inputs
VID(AC)
0.7
VCCQ + 0.6
V
Input crossing point voltage, CK and CK# input
VIX(AC)
0.5*VCCQ - 0.2
0.5*VCCQ + 0.2
V
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| WV3EG64M64ETSU-D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM UNBUFFERED |
| WV3EG64M64ETSU-D4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
| WV3EG64M72ETSU-D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED |
| WV3EG72M64ETSU335D3MG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED |
| WV3EG72M64ETSU335D3SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED |
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