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參數(shù)資料
| 型號： | WV3EG64M64ETSU403D4IMG |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.65 ns, ZMA200 |
| 封裝： | ROHS COMPLIANT, SODIMM-200 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 177K |
| 代理商： | WV3EG64M64ETSU403D4IMG |
WV3EG64M64ETSU-D4
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
March 2006
Rev. 0
PRELIMINARY
DC OPERATING CONDITIONS
TA = 0°C to 70°C
Parameter/Condition
Symbol
Min
Max
Units
Notes
Supply Voltage DDR400 (nominal VCC 2.6)
VCC
2.5
2.7
V
I/O Supply Voltage DDR400 (nominal VCC 2.6)
VCCQ
2.5
2.7
V
Supply Voltage DDR333
VCC
2.3
2.7
V
I/O Supply Voltage DDR333
VCCQ
2.3
2.7
V
I/O Reference Voltage
VREF
0.49 × VCCQ
0.51 × VCCQ
V1
I/O Termination Voltage (system)
VTT
VREF - 0.04
VREF + 0.04
V
2
Input High (Logic 1) Voltage
VIH(DC)
VREF + 0.15
VCC + 0.30
V
Input Low (Logic 0) Voltage
VIL(DC)
-0.3
VREF - 0.15
V
Input voltage level, CK and CK#
VIN(DC)
-0.3
VCCQ + 0.30
V
Input differential voltage, CK and CK#
VID(DC)
-0.3
VCCQ + 0.60
V
3
Input crossing point voltage, CK and CK#
VIX(DC)
-0.3
VCCQ + 0.60
V
Input leakage current
Addr, CAS#,
RAS#, WE#
II
-16
16
A
CS#, CKE
-16
16
A
CK, CK#
-8
8
A
DM
-2
2
A
Output leakage current
IOZ
-5
5
A
Output high current (normal strength)
VOUT = v + 0.84V
IOH
-16.8
—
mA
Output high current (normal strength)
VOUT = v - 0.84V
IOL
-16.8
—
mA
Output high current (half strength)
VOUT = VTT + 0.45V
VOH
-9
—
mA
Output high current (half strength)
VOUT = VTT - 0.45V
VOL
9—
mA
Notes:
1. VREF is expected to be equal to 0.5*VCCQ of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on VREF may not exceed +/-2% of the DC
values.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF.
3. VID is the magnitude of the difference between the input level on CK and the input level of CK#.
4. Industrial grade modules are specied to a DRAM tCASE of 85°C and -40°C
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any in relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VCC & VCCQ supply relative to VSS
VCC, VCCQ
-1.0 ~ 3.6
V
Voltage on VREF supply relative to VSS
VREF
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Operating temperature
TA
0 ~ 70
°C
Power dissipation
PD
8W
Short circuit output current
IOS
50
mA
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed.
Functional operation should be restricted to recommended operating condition.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
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| WV3EG64M64ETSU-D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM UNBUFFERED |
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