參數(shù)資料
型號: WV3DG64127V10D2
英文描述: 1GB - 2x64Mx64, SDRAM UNBUFFERED
中文描述: 1GB的- 2x64Mx64,內(nèi)存緩沖
文件頁數(shù): 4/8頁
文件大?。?/td> 255K
代理商: WV3DG64127V10D2
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WV3DG64127V-D2
April 2005
Rev. 0
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
ADVANCED*
I
DD
SPECIFICATIONS AND CONDITIONS
V
CC
, V
CCQ
= +3.3V ±0.3V; SDRAM component values only
Parameter
Symbol
Test Condition
Version
Unit
Note
7
75
10
Operating current
(One bank active)
I
CC1
Burst length = 1, t
RC
≥ t
RC
(min), IO = 0 mA
2080
1920
1920
mA
1
Precharge standby current
in power-down mode
I
CC2P
I
CC2PS
CKE ≤ V
IL
(max), t
CC
= 10ns
CKE & CLK ≥ V
IL
(max), t
CC
= ∞
CKE ≥ V
IH
(min), CS# ≥ VIH(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE ≥ V
IH
(min), CLK ≤ V
IL
(max), t
CC
= ∞
Input signals are stable
CKE ≤ V
IL
(max), t
CC
= 10ns
CKE & CLK ≤ V
IL
(max), t
CC
= ∞
CKE ≥ V
IH
(min), CS# ≥ V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE ≥ V
IH
(min), CLK ≤ V
IL
(max), t
CC
= ∞
Input signals are stable
IO = 0 mA
Page burst
4banks Activated.
t
CCD
= 2CLKs
t
RC
≥ t
RC
(min)
CKE ≤ 0.2V
64
64
mA
Precharge standby current
in non power-down mode
I
CC2N
640
mA
I
CC2NS
320
Active standby current in
power-down mode
I
CC3P
I
CC3PS
200
200
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3N
960
mA
I
CC3NS
800
mA
Operating current
(Burst mode)
I
CC4
2240
2240
2080
mA
1
Refresh current
Self refresh current
I
CC5
I
CC6
4000
3680
96
3520
mA
mA
2
C
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing is CMOS (V
IH
/V
IL
= V
CCQ
/V
JSQ
)
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