參數(shù)資料
型號(hào): WV3DG64127V10D2
英文描述: 1GB - 2x64Mx64, SDRAM UNBUFFERED
中文描述: 1GB的- 2x64Mx64,內(nèi)存緩沖
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 255K
代理商: WV3DG64127V10D2
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WV3DG64127V-D2
April 2005
Rev. 0
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
ADVANCED*
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
32
50
Units
V
V
°C
W
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: V
SS
= 0V, 0°C
T
A
+70°C
Symbol
Min
V
CC
3.0
V
IH
2.0
V
IL
-0.3
V
OH
2.4
V
OL
I
LI
-10
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Typ
3.3
3.0
Max
3.6
Unit
V
V
V
V
V
μA
Note
V
CCQ
+0.3
0.8
0.4
10
1
2
I
OH
= -2mA
I
OL
= -2mA
3
Note:
1.
2.
3.
V
IH
(max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.
V
IL
(min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.
Any input 0V ≤ V
IN
≤ V
CC
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
T
A
= 25°C, f = 1MHz, V
CC
= 3.3V, V
REF
=1.4V
±
200mV
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0-CKE1)
Input Capacitance (CK0-CK3)
Input Capacitance (CS0#-CS3#)
Input Capacitance (DQM0-DQM7)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
150
150
80
45
45
30
150
30
pF
pF
pF
pF
pF
pF
pF
pF
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