參數(shù)資料
型號: WSF512K16-39H2M
英文描述: SRAM/EEPROM
中文描述: 的SRAM / EEPROM的
文件頁數(shù): 6/15頁
文件大?。?/td> 182K
代理商: WSF512K16-39H2M
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FWE CONTROLLED
(V
CC
= 5.0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-90
-120
Unit
Min
90
0
45
0
45
0
45
20
Max
Min
120
0
50
0
50
0
50
20
Max
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time Before Write
V
CC
Set-up Time
Chip Programming Time
Chip Select Hold Time
Chip Erase Time (3)
t
AVAV
t
ELWL
t
WLWH
t
AVWL
t
DVWH
t
WHDX
t
WLAX
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
WPH
ns
ns
ns
ns
ns
ns
ns
ns
μ
s
sec
μ
s
μ
s
sec
ns
sec
300
15
300
15
0
0
t
VCS
50
50
11
11
t
OEH
10
10
64
64
FLASH AC CHARACTERISTICS – READ ONLY OPERATIONS
(V
CC
= 5.0V, T
A
= -55
°
C to +125
°
C)
Symbol
Parameter
-90
-120
Unit
Min
90
Max
Read Cycle Time
Address Access Time
Chip Select Access Time
OE to Output Valid
Chip Select to Output High Z (1)
OE High to Output High Z (1)
Output Hold from Address, CS or OE Change, whichever is first
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
120
ns
ns
ns
ns
ns
ns
ns
90
90
35
20
20
120
120
50
30
30
0
0
1. Guaranteed by design, not tested.
1. Typical value for t
WHWH1
is 7ns.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 8sec.
WSF512K16-XXX
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