參數(shù)資料
型號: WSE128K16-XG2TX
英文描述: SRAM/EEPROM MCP
中文描述: 的SRAM / EEPROM的MCP的
文件頁數(shù): 4/15頁
文件大小: 158K
代理商: WSE128K16-XG2TX
4
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WSE128K16-XXX
FIG. 3
AC TEST CIRCUIT
AC TEST CONDITIONS
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
SRAM AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-35
-45
-70
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1. This parameter is guaranteed by design but not tested.
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
35
45
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
35
45
70
0
0
3
35
20
45
25
70
35
3
0
3
0
3
0
20
20
20
20
25
25
SRAM AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-35
-45
-70
Units
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
1. This parameter is guaranteed by design but not tested.
Min
35
25
25
20
25
0
0
4
Max
Min
45
30
30
25
30
0
0
4
Max
Min
70
60
60
30
50
5
5
5
Max
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
25
25
0
0
0
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