參數(shù)資料
型號(hào): WSE128K16-XG2TX
英文描述: SRAM/EEPROM MCP
中文描述: 的SRAM / EEPROM的MCP的
文件頁(yè)數(shù): 10/15頁(yè)
文件大?。?/td> 158K
代理商: WSE128K16-XG2TX
10
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WSE128K16-XXX
EEPROM PAGE WRITE OPERATION
The WSE128K16-XXX has a page write operation that allows one
to 128 bytes of data to be written into the device and consecutively
loads during the internal programming period. Successive bytes
may be loaded in the same manner after the first data byte has
been loaded. An internal timer begins a time out operation at each
write cycle. If another write cycle is completed within 150
μ
s or
less, a new time out period begins. Each write cycle restarts the
delay period. The write cycles can be continued as long as the
interval is less than the time out period.
The usual procedure is to increment the least significant
address lines from A0 through A6 at each write cycle. In this
manner a page of up to 128 bytes can be loaded in to the
EEPROM in a burst mode before beginning the relatively long
interval programming cycle.
After the 150
μ
s time out is completed, the EEPROM begins an
internal write cycle. During this cycle the entire page of bytes
will be written at the same time. The internal programming
cycle is the same regardless of the number of bytes accessed.
EEPROM PAGE WRITE CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
FIG. 11
EEPROM PAGE MODE
WRITE WAVEFORMS
1. Page address must remain valid for duration of write cycle.
Page Mode Write Characteristics
Parameter
Write Cycle Time, TYP = 6ms
Address Set-up Time
Address Hold Time (1)
Data Set-up Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
Symbol
Unit
Min
Max
10
t
WC
t
AS
t
AH
t
DS
t
DH
t
WP
t
BLC
t
WPH
ms
ns
ns
ns
ns
ns
μ
s
ns
0
100
100
10
150
150
50
OE
BYTE 0
BYTE 1
BYTE 2
BYTE 3
VALID DATA
VALID
ADDRESS
t
WC
t
BLC
t
WPH
t
WP
ADDRESS
EEPROM
DATA
ECS
1-2
EWE
1-2
BYTE 127
t
DS
t
DH
t
AS
t
AH
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